3D and flash memory architecture with FeFET

ABSTRACT

A 3D flash memory is provided to includes a gate stack structure comprising a plurality of gate layers electrically insulated from each other, a cylindrical channel pillar vertically extending through each gate layer of the gate stack structure, a first conductive pillar vertically extending through the gate stack structure, the first conductive pillar being located within the cylindrical channel pillar and being electrically connected to the cylindrical channel pillar, and a second conductive pillar extending through the gate stack structure, the second conductive pillar being located within the cylindrical channel pillar and being electrically connected to the cylindrical channel pillar, the first conductive pillar and the second conductive pillar being separated from each other. The 3D flash memory also includes a ferroelectric layer disposed between gate layers of the gate stack structure and the cylindrical channel pillar.

PRIORITY APPLICATION

This application claims the benefit of U.S. Provisional PatentApplication No. 62/897,402 filed 9 Sep. 2019; which application isincorporated herein by reference.

BACKGROUND Field of Invention

The present invention relates to 3D flash memory and in particularrelates to 3D AND or 3D NOR flash memory architecture and control logic.

Description of Related Art

Non-volatile memory (such as a flash memory) is widely used in personalcomputers and other electronic devices because it has an advantage thatthe stored data does not disappear after the computer and/or devices arepowered off.

As 3D AND flash memory becomes ever increasingly used in electronicdevices, a need arises to develop a 3D AND flash memory that is smaller,so that larger memory capacities can be implemented in electronicdevices, even as they themselves become smaller. Further another needarises to develop an 3D AND flash memory that is more efficient and thatoperates at higher speeds. The increased efficiency allows batteryoperated electronics to operate longer on a single charge and theincrease speed allows the electronic devices to operate faster.

Therefore, it is desirable to provide a 3D AND flash memory architecturethat is smaller, more efficient and faster. The technology disclosedachieves these characteristics by forming cylindrical channel pillarsand by implementing ferroelectric materials to form Ferroelectric FieldEffect Transistors (FeFET). The cylindrical channel pillars can beelliptically shaped, circularly shaped or some other type of shape.

SUMMARY

The present invention provides a 3D flash memory. The 3D flash memoryincludes a gate stack structure comprising a plurality of gate layerselectrically insulated from each other, a cylindrical channel pillarvertically extending through each gate layer of the gate stackstructure, a first conductive pillar vertically extending through thegate stack structure, the first conductive pillar being located withinthe cylindrical channel pillar and being electrically connected to thecylindrical channel pillar, a second conductive pillar verticallyextending through the gate stack structure, the second conductive pillarbeing located within the cylindrical channel pillar and beingelectrically connected to the cylindrical channel pillar, the firstconductive pillar and the second conductive pillar being separated fromeach other; and a ferroelectric layer disposed between gate layers ofthe gate stack structure and the cylindrical channel pillar. Thecylindrical channel pillar can be elliptical (elliptically shaped) orcircular (circularly shaped) or of another type of shape. The 3Darchitecture described throughout this document can be implemented as a3D AND or a 3D NOR device. While 3D AND is primarily describe thetechnology disclosed is not limited thereto and can also be implementedas a 3D NOR device.

According to an aspect of the technology disclosed, an insulating pillaris disposed within the cylindrical channel pillar and between the firstconductive pillar and the second conductive pillar.

According to another aspect of the technology disclosed, a first buriedconductor is disposed horizontally under the gate stack and iselectrically connected to the first conductive pillar, and a secondburied conductor is disposed horizontally under the gate stack and iselectrically connected to the second conductive pillar.

Further, according to one aspect of the technology disclosed, theferroelectric layer vertically extends through the gate stack structure.

In one aspect of the technology disclosed the ferroelectric layer is onan upper surface and a lower surface of each gate layer of the pluralityof gate layers.

In another aspect of the technology disclosed the ferroelectric layercovers an outer surface of the cylindrical channel pillar.

Moreover, according to an aspect of the technology disclosed thecylindrical channel pillar is continuous in a vertical direction.

According to an aspect of the technology disclosed the ferroelectriclayer is comprised of a ferroelectric HfO₂ material.

In a further aspect of the technology disclosed, the 3D flash memory caninclude an insulator disposed between the first conductive pillar andthe second conductive pillar and extending along a length of the firstconductive pillar and the second conductive pillar. The insulator canseparate the first conductive pillar and the second conductive pillarfrom one another.

In another aspect, the 3D flash memory includes a first buried conductordisposed in a dielectric base onto which the gate stack structure isdisposed and connected to the first conductive pillar, a second buriedconductor disposed in the dielectric base and connected to the secondconductive pillar, and a control circuit. The control circuit isconfigured to perform a program operation on the 3D flash memory by:providing a voltage of approximately +5 volts to +8 volts on a selectedword line connected to a selected gate layer of the plurality of gatelayers; providing a voltage of approximately 0 volts on a selectedsource line connected to the first buried conductor connected to thefirst conductive pillar within the cylindrical channel pillar; andproviding a voltage of approximately 0 volts on a selected bit lineconnected to the second buried conductor connected to the secondconductive pillar within the cylindrical channel pillar.

In one aspect, the 3D flash memory includes an insulator disposedbetween the first conductive pillar and the second conductive pillar andextending along a length of the first conductive pillar and the secondconductive pillar, the insulator separating the first conductive pillarand the second conductive pillar from one another.

In a further aspect, the 3D flash memory includes a control circuit. Thecontrol circuit is configured to perform an erase operation on the 3Dflash memory by: providing a voltage V_(ERS) of approximately −5 voltsto −8 volts on a selected word line connected to a selected gate layerof the plurality of gate layers; providing a voltage of approximately 0volts on a selected source line connected to the first conductive pillarwithin the cylindrical channel pillar; and providing a voltage ofapproximately 0 volts on a selected bit line connected to the secondconductive pillar within the cylindrical channel pillar.

In another aspect, control circuit is further configured to perform theerase operation on the 3D flash memory by: providing a voltage ofapproximately 0 volts to deselected word lines connected to gate layersof the plurality of gate layers, except for the selected gate layer;providing a voltage of approximately (0.5)×V_(ERS) volts to a deselectedsource line connected to a third conductive pillar within a secondcylindrical channel pillar; and providing a voltage of approximately(0.5)×V_(ERS) volts to a deselected bit line connected to a fourthconductive pillar within the second cylindrical channel pillar.

In one aspect the 3D flash memory further includes a second cylindricalchannel pillar having the same structure and arrangement as thecylindrical channel pillar, a third conductive pillar having the samestructure and arrangement as the first conductive pillar, a fourthconductive pillar having the same structure and arrangement as thesecond conductive pillar, a control circuit. The control circuit isconfigured to perform a read operation on the 3D flash memory by:providing a voltage of approximately +2 volts to +4 volts on a selectedword line connected to a selected gate layer of the plurality of gatelayers; providing a voltage of approximately 0 volts selected anddeselected source lines connected to the first conductive pillar withinthe cylindrical channel pillar and connected to the third conductivepillar within the second cylindrical channel pillar; and providing avoltage of approximately +0.5 volts to +1.5 volts on a selected bit lineconnected to the third conductive pillar within the cylindrical channelpillar.

According to another aspect, the control circuit is further configuredto perform the read operation on the 3D flash memory by: providing avoltage of approximately 0 volts to −2 volts to deselected word linesconnected to gate layers of the plurality of gate layers, except for theselected gate layer; and providing a voltage of approximately 0 volts toa deselected bit line connected to the fourth conductive pillar withinthe second cylindrical channel pillar.

Further, in another aspect, a control circuit configured to program,erase and read a 3D flash memory is provided. The 3D flash memoryincludes a gate stack structure comprising a plurality of gate layerselectrically insulated from each other, a cylindrical channel pillarvertically extending through each gate layer of the gate stackstructure, a first conductive pillar vertically extending through thegate stack structure, the first conductive pillar being located withinthe cylindrical channel pillar and being electrically connected to thecylindrical channel pillar, a second conductive pillar verticallyextending through the gate stack structure, the second conductive pillarbeing located within the cylindrical channel pillar and beingelectrically connected to the cylindrical channel pillar, the firstconductive pillar and the second conductive pillar being separated fromeach other, and a ferroelectric layer disposed between each gate layerof the gate stack structure and the cylindrical channel pillar.Additionally, the control circuit is configured to variously performprogram, erase and read operations by: providing various voltages to aselected word line connected to a selected gate layer of the gate stackstructure of the 3D flash memory; providing various voltages to aselected bit line connected to the second conductive pillar within thecylindrical channel pillar of the 3D flash memory; and providing variousvoltages to a selected source line connected to the first conductivepillar within the cylindrical channel pillar of the 3D flash memory.

Additionally, a method of forming a gate stack including a dielectriclayer and a ferroelectric layer is provided. The method can includeforming a gate stack structure comprising a plurality of gate layerselectrically insulated from each other, forming a cylindrical channelpillar vertically extending through each gate layer of the gate stackstructure, forming a first conductive pillar vertically extendingthrough the gate stack structure, the first conductive pillar beinglocated within the cylindrical channel pillar and being electricallyconnected to the cylindrical channel pillar, forming a second conductivepillar vertically extending through the gate stack structure, the secondconductive pillar being located within the cylindrical channel pillarand being electrically connected to the cylindrical channel pillar,forming an insulating pillar disposed within the cylindrical channelpillar and between the first conductive pillar and the second conductivepillar, and forming a ferroelectric layer disposed between gate layersof the gate stack structure and the cylindrical channel pillar.

Moreover, according to an aspect of the method, the ferroelectric laycan vertically extend through the gate stack structure.

According to a further aspect of the method, a cross-section of theferroelectric layer is a cylinder, and wherein the ferroelectric layersurrounds an outer surface of the cylindrical channel pillar.

In one aspect, the method further includes disposing a first buriedconductor in a dielectric base onto which the gate stack structure isdisposed, the first buried conductor being connected to the firstconductive pillar, and disposing a second buried conductor in thedielectric base, the second buried conductor being connected to thefirst conductive pillar.

In another aspect the channel layer forms a vertically extending channelpillar that is continuous in a vertical direction.

Other aspects and advantages of the present invention can be seen onreview of the drawings, the detailed description and the claims, whichfollow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic top view of a 3D AND flash memory having acylindrical channel pillar structure.

FIG. 2 is a schematic top view of a 3D AND flash memory having anelliptically shaped cylindrical channel pillar structure, according toan aspect of the technology disclosed.

FIG. 3 provides an orthogonal illustration of a 3D AND flash memoryhaving an elliptically shaped channel pillar structure and acorresponding cross-sectional view of an elliptically shaped channelpillar and gate stack structure, according to an aspect of thetechnology disclosed.

FIG. 4 illustrates various voltages applied to a 3D AND flash memory toperform a read operation, according to an aspect of the technologydisclosed.

FIG. 5 illustrates various voltages applied to a 3D AND flash memory toperform a program operation, according to an aspect of the technologydisclosed.

FIG. 6 illustrates various voltages applied to a 3D AND flash memory toperform an erase operation, according to an aspect of the technologydisclosed.

FIG. 7 illustrates various steps performed to manufacture a gate stackstructure of a 3D AND flash memory according to a first process.

FIG. 8 illustrates various steps performed to manufacture a gate stackstructure of a 3D AND flash memory according to a first process.

FIG. 9 illustrates various steps performed to manufacture a gate stackstructure of a 3D AND flash memory according to a first process.

FIG. 10 illustrates a step performed to manufacture a gate stackstructure of a 3D AND flash memory according to a first process.

FIG. 11 illustrates various steps performed to manufacture a gate stackstructure of a 3D AND flash memory according to a second process.

FIG. 12 illustrates various steps performed to manufacture a gate stackstructure of a 3D AND flash memory according to a second process.

FIG. 13 illustrates various steps performed to manufacture a gate stackstructure of a 3D AND flash memory according to a second process.

FIG. 14 illustrates a step performed to manufacture a gate stackstructure of a 3D AND flash memory according to a second process.

FIG. 15 illustrates a simplified block diagram of a 3D AND flash memory,host and a controller configured to perform operations on the 3D ANDflash memory.

DETAILED DESCRIPTION

A detailed description of embodiments of the present invention isprovided with reference to the FIGS. 1-15.

FIG. 1 is a schematic top view of a 3D AND flash memory having acylindrical channel pillar structure.

Specifically, FIG. 1 illustrates a top view of a (ferroelectric) 3D ANDflash memory 100 that includes an insulating layer 102 comprised of, forexample, silicon oxide. Below the insulating layer 102 lies a stackstructure (not illustrated). Further, the 3D AND flash memory 100includes a memory material 104 formed on an inner surface of an openingcreated during the process of manufacturing the 3D AND flash memory 100.The 3D AND flash memory 100 also includes a circular channel pillar 106formed inside the memory material 104. In one embodiment, the memorymaterial 104 can be continuous along the circular channel pillar 106,allowing 102 to be an insulating layer or a gate layer. In anotherembodiment (not illustrated), the memory material 104 can be on an uppersurface and a lower surface of a gate layer (e.g., 102 is a gate layerin this embodiment and the memory material 104 is on an upper surfaceand a lower surface of 102).

Additionally, the 3D AND flash memory 100 includes an insulating layer108 comprised of, for example, silicon oxide. The 3D AND flash memory100 also includes a first conductive pillar 110 that can be a sourcepillar or a drain pillar, a second conductive pillar 112 that can be asource pillar or a drain pillar and an insulator 114 arranged betweenthe first conductive pillar 110 and the second conductive pillar 112. Acombination of the memory material 104, the channel pillar 106, theinsulating layer 108, the first conductive pillar 110, the secondconductive pillar 112 and the insulator 114 can be referred to as avertical channel that extends through the stack structure.

As illustrated, this 3D AND flash memory 100 includes several verticalchannels. Example dimensions are illustrated with respect to thestructure of the 3D AND flash memory 100 and the vertical channels.These dimensions are only for exemplary purposes, are not to scale andare provided only in order to illustrate the space and size reductionthat can be achieved by the technology disclosed (e.g., see descriptionof FIG. 2 provided below). For example, a diameter D of the memorymaterial 104 can be 0.28 μm, a spacing S from a leftmost side of aparticular vertical channel to a leftmost side of an adjacent verticalchannel can be 0.32 μm and a length L of the 3D AND flash memory 100 canbe 1.5 μm. The Unit Vertical Channel Area can be calculated as(S×L)/(number of rows of vertical channels). Using the examplemeasurements from above, the Unit Vertical Channel Area equals (0.32μm×1.5 μm)/4, which is 0.12 μm².

The 3D architecture described throughout this document can beimplemented as a 3D AND or a 3D NOR device. While 3D AND is primarilydescribe the technology disclosed is not limited thereto and can also beimplemented as a 3D NOR device.

FIG. 2 is a schematic top view of a (ferroelectric) 3D AND flash memoryhaving an elliptically shaped cylindrical channel pillar structure,according to an aspect of the technology disclosed.

Specifically, FIG. 2 illustrates a top view of 3D AND flash memory 200that is able to decrease the size (footprint) of the vertical channels,which allows more memory to be packed into a space than the 3D AND flashmemory 100 of FIG. 1. The 3D AND flash memory includes an insulatinglayer 202 comprised of, for example, silicon oxide. Below the insulatinglayer 202 lies a stack structure (not illustrated here, but illustratedin subsequent figures). Further, the 3D AND flash memory 200 includes amemory material 204 formed on an inner surface of an opening createdduring the process of manufacturing the 3D AND flash memory 200. Asdiscussed below in more detail, the memory material 204 can be aferroelectric layer, which improves efficiency and performance of the 3DAND flash memory 200. The 3D AND flash memory 200 also includes anelliptically shaped cylindrical channel pillar 206 formed inside thememory material 204. The memory material 204 is also elliptically shapedcylindrical. In other words, both the elliptically shaped cylindricalchannel pillar 206 and the elliptically shaped cylindrical memorymaterial 204 can have elliptical cross-sections, as opposed to thecircular cross-sections of the memory material 104 and the channelpillar 106 illustrated in FIG. 1. With respect to the cross-sectionsmentioned above, note that the cylindrical channel pillar 206 and thecylindrical memory materials 204 have a cross-section that is orthogonalto a longitudinal axis of the cylinder (206, 204) and that cross-sectioncan be circular, elliptical, rectangular or other polygonal. Thiscross-section can be elongated so as to encompass the verticalsource/drain conductors in one direction but have a reduced pitch in anorthogonal direction. A structure is cylindrical when it has a structurelike a cylinder within variations due to practicalities of manufacturingand layout. The above-described cross-sectional structure can be appliedto any cylindrical channel pillar memory materials described herein.This elliptical shape is what allows the 3D AND flash memory 200 to haveincreased storage capacity than an equally sized 3D AND flash memory100. In one embodiment, the memory material 204 can be continuous alongthe circular channel pillar 206, allowing 202 to be an insulating layeror a gate layer. In another embodiment (not illustrated), the memorymaterial 204 can be on an upper surface and a lower surface of a gatelayer (e.g., 202 is a gate layer in this embodiment and the memorymaterial 204 is on an upper surface and a lower surface of 202).

Further, the 3D AND flash memory 200 includes an insulating layer 208comprised of, for example, silicon oxide. The 3D AND flash memory 200also includes a first conductive pillar 210, a second conductive pillar212 and an insulator 214 arranged between the first conductive pillar210 and the second conductive pillar 212. As illustrated, the firstconductive pillar 210 and the second conductive pillar 212 are separatedfrom one another by both the insulator 214 and the insulating layer 208.A combination of the elliptically shaped cylindrical memory material204, the elliptically shaped cylindrical channel pillar 206, theinsulating layer 208, the first conductive pillar 210, the secondconductive pillar 212 and the insulator 214 can be referred to as avertical channel that extends through the stack structure.

As illustrated, this 3D AND flash memory 200 includes several verticalchannels. Example dimensions are illustrated with respect to thestructure of the 3D AND flash memory 200 and the vertical channels.These dimensions are only for exemplary purposes, are not to scale andare provided only in order to illustrate the space and size reductionthat can be achieved by the technology disclosed in comparison to the 3DAND flash memory 100. For example, a diameter D′ (i.e., major axisdiameter) of the elliptically shaped memory material 204 can be 0.28 μm,a spacing S′ from a leftmost side of a particular vertical channel to aleftmost side of an adjacent vertical channel can be 0.32 μm and alength L′ of the 3D AND flash memory 200 can be 0.98 μm. The UnitVertical Channel Area can be calculated as (S×L)/(number of rows ofvertical channels). Using the example measurements from above, the UnitVertical Channel Area equals (0.32 μm×0.98 μm)/4, which is 0.0784 μm².

When comparing to the Unit Vertical Channel Area of the 3D AND flashmemory 100 of 0.12 μm² to the Unit Vertical Cannel Area of the 3D ANDflash memory 200 of 0.0784 μm², it is clear that the 3D flash memory 200can offer a 35% savings in area compared to the 3D AND flash memory 100.This savings allows more memory to fit in a space and/or allows forsmaller memories that leave more room for other components of anelectronic device.

Additionally, a gap G between the vertical channels can be, for example0.04 μm and a minor axis diameter D2 of the vertical channels can be,for example, 0.15 μm.

Further, the elliptically shaped cylindrical channel pillar 206 and theelliptically shaped memory material 204 can be circular (circularlyshaped) or of another type of shape. This applies to all ellipticalstructures described throughout this document.

FIG. 3 provides an orthogonal illustration of a 3D AND flash memoryhaving an elliptically shaped cylindrical channel pillar structure and acorresponding cross-sectional view of an elliptically shaped cylindricalchannel pillar and gate stack structure, according to an aspect of thetechnology disclosed.

Specifically, FIG. 3 includes an orthogonal view 300 of a 3D AND flashmemory and a cross-sectional view 350 of the 3D AND flash memory. The 3DAND flash memory includes a gate stack structure 302, which includes aplurality of gate layers 304, where the gate layers 304 are electricallyinsulated from one another by an insulator. However, the insulatorbetween each of the gate layers 304 is not illustrated in FIG. 3. Inthis aspect of the technology disclosed, ferroelectric layers 306 are onupper surfaces and a lower surfaces of the gate layers 304. FIG. 3illustrates three gate layers 304. However, a 3D AND memory may have anynumber of gate layers 304.

Additionally, the 3D AND flash memory includes a plurality ofelliptically shaped cylindrical channel pillars 308. FIG. 3 illustratesfour elliptically shaped cylindrical channel pillars 308. However, a 3DAND flash memory may have any number of elliptically shaped cylindricalchannel pillars 308. The elliptically shaped cylindrical channel pillars308 vertically extend through each gate layer 304 of the gate stackstructure 302. As illustrated, a cross-section of the ellipticallyshaped cylindrical channel pillar 308 is an elliptical cylinder.Additionally, in this aspect of the technology disclosed and asillustrated in the cross-sectional view 350, the ferroelectric layers306 also contact the elliptically shaped cylindrical channel pillars 308(i.e., the ferroelectric layers 306 are disposed between the gate layers304 and the elliptically shaped cylindrical channel pillars 308). Theprocess of forming this structure illustrated in FIG. 3 is illustratedin FIGS. 7-10 and is discussed in detail below. In another aspect of thetechnology disclosed, the ferroelectric layers 306 cover/surround outersurfaces of the elliptically shaped cylindrical channel pillars 308. Theprocess of forming this alternate structure is illustrated in FIGS.11-14 and is discussed in detail below.

Turing back to FIG. 3, a first conductive pillar 310 that can be asource pillar or a drain pillar is disposed/located within eachelliptically shaped cylindrical channel pillar 308, where each firstconductive pillar 310 also vertically extends through the gate stackstructure 302. Further, a second conductive pillar 312 that can be asource pillar or a drain pillar is disposed/located within eachelliptically shaped cylindrical channel pillar 308, where each secondconductive pillar 312 also vertically extends through the gate stackstructure 302. In other words, each elliptically shaped cylindricalchannel pillar 308 includes a first conductive pillar 310 and a secondconductive pillar 312 pair. As an alternative to what is illustrated inFIG. 3, the first conductive pillar 310 and the second conductive pillar312 pair may be oriented such that the second conductive pillar 312 isto the left and the first conductive pillar 310 is on the right, withinthe elliptically shaped cylindrical channel pillar 308.

Additionally, the first conductive pillar 310 and the second conductivepillar 312 of each pair are separated from each other within theelliptically shaped cylindrical channel pillar 308. Further, the firstconductive pillar 310 and the second conductive pillar 312 are connectedto the elliptically shaped cylindrical channel pillar 308. An insulatingpillar (not illustrated) is disposed within each elliptically shapedcylindrical channel pillar 308 and between each first conductive pillar310 and second conductive pillar 312 pair. In the same fashion as theelliptically shaped cylindrical channel pillars 308, the firstconductive pillars 310 and the second conductive pillars 312 extendabove and below the gate stack structure 302.

The elliptically shaped cylindrical channel pillars 308 can becontinuous in the vertical direction in which they extend, meaning thatthe elliptically shaped cylindrical channel pillars 308 are integral intheir extending direction and are not divided into a plurality ofdisconnected portions. Alternatively, the elliptically shapedcylindrical channel pillars 308 can be discontinuous in the verticaldirection in which they extend, meaning that the elliptically shapedcylindrical channel pillars 308 are not integral in their extendingdirection and are divided into a plurality of disconnected portions.

The ferroelectric layers 306 can be comprised of a ferroelectric HfO₂material, hafnium oxide, including, for example, silicon-doped hafniumoxide and zirconium-doped hafnium oxide, or any other ferroelectric typematerial that is known to a person of ordinary skill in the art. Forexample, the ferroelectric HfO₂ material can have an approximatethickness of 20 nm and can have an approximate micro coulomb per squarecentimeter (μC/cm²) of 15-18.

FIG. 4 illustrates various voltages applied to a 3D AND flash memory toperform a read operation, according to an aspect of the technologydisclosed.

The 3D AND flash memory are configured to perform various operations,such as read, program (write) and erase. Controller circuitry isconfigured to provide specific electrical signals to various parts ofthe 3D AND flash memory in order to perform these various operations.Example controller circuitry is illustrated in FIG. 15 and is discussedin more detail below.

FIG. 4 illustrates source line SL1, bit line BL1, source line SL2 andbit line BL2. Source line SL1 corresponds, for example, to an electricalconnection to first conductive pillar 310 of FIG. 3 or corresponds tothe first conductive pillar 310 itself. Bit line BL1 corresponds, forexample, to an electrical connection to second conductive pillar 312 ofFIG. 3 or corresponds to the second conductive pillar 312 itself.Further, source line SL1 and bit line BL1 correspond to electricalconnections to a first conductive pillar 310 and second conductivepillar 312 pair (or to the first conductive pillar 310 and secondconductive pillar 312 pair itself) located within a particularelliptically shaped cylindrical channel pillar 308. In other words,source line SL1 and bit line BL1 are located within the sameelliptically shaped cylindrical channel pillar 308.

Source line SL2 corresponds, for example, to an electrical connection toanother first conductive pillar 310 of FIG. 3 or corresponds to theother first conductive pillar 310 itself. Bit line BL2 corresponds, forexample, to an electrical connection to another second conductive pillar312 of FIG. 3 or corresponds to the other second conductive pillaritself 312. Further, source line SL2 and bit line BL2 correspond toelectrical connections to another first conductive pillar 310 and secondconductive pillar 312 pair (or to the other first conductive pillar 310and second conductive pillar 312 pair itself) located within a anotherelliptically shaped cylindrical channel pillar 308. In other words,source line SL2 and bit line BL2 are located within the sameelliptically shaped cylindrical channel pillar 308.

FIG. 4 also illustrates four word lines including WL1, WL2, WL3 and WL4.The four word lines correspond to electrical connections to various gatelayers (e.g., gate layers 304 of FIG. 3) or to the gate layersthemselves.

As illustrated in FIG. 4, a cell is selected for the read operation. Theselected cell of the 3D AND memory is located at the intersection ofsource line SL1, bit line BL1 and word line WL4. In order to perform aread operation on the selected cell (i) a selected word line voltage VwLof approximately 2V to 4V is applied to word line WL4, (ii) ade-selected word line voltage VcwL of approximately 0V to −2V is appliedto non-selected word lines WL1, WL2 and WL3, (iii) a selected bit linevoltage VBL of approximately 0.5V to 1.5V is applied to bit line BL1,(iv) a de-selected bit line voltage of 0V is applied to non-selected bitline BL2 and (v) a source line voltage of 0V is applied to source linesSL1 and SL2. The use of a negative voltage VcwL on the de-selected wordlines WL1, WL2 and WL3 can avoid leakage current from the de-selectedword lines WL1, WL2 and WL3. With the 3D AND flash memory structuredescribed herein, a target read speeds on the order of approximately 100ns can be achieved.

FIG. 5 illustrates various voltages applied to a 3D AND flash memory toperform a program (write) operation, according to an aspect of thetechnology disclosed.

The 3D AND flash memory is configured to perform various operations,such as read, program (write) and erase. Controller circuitry isconfigured to provide specific electrical signals to various parts ofthe 3D AND flash memory in order to perform these various operations.Example controller circuitry is illustrated in FIG. 15 and is discussedin more detail below.

FIG. 5 illustrates source line SL1, bit line BL1, source line SL2 andbit line BL2. Source line SL1 corresponds, for example, to an electricalconnection to first conductive pillar 310 of FIG. 3 or corresponds tothe first conductive pillar 310 itself. Bit line BL1 corresponds, forexample, to an electrical connection to second conductive pillar 312 ofFIG. 3 or corresponds to the second conductive pillar 312 itself.Further, source line SL1 and bit line BL1 correspond to electricalconnections to a first conductive pillar 310 and second conductivepillar 312 pair (or to the first conductive pillar 310 and secondconductive pillar 312 pair itself) located within a particularelliptically shaped cylindrical channel pillar 308. In other words,source line SL1 and bit line BL1 are located within the sameelliptically shaped cylindrical channel pillar 308.

Source line SL2 corresponds, for example, to an electrical connection toanother first conductive pillar 310 of FIG. 3 or corresponds to theother first conductive pillar 310 itself. Bit line BL2 corresponds, forexample, to an electrical connection to another second conductive pillar312 of FIG. 3 or corresponds to the other second conductive pillaritself. Further, source line SL2 and bit line BL2 correspond toelectrical connections to another first conductive pillar 310 and secondconductive pillar 312 pair (or to the other first conductive pillar 310and second conductive pillar 312 pair itself) located within a anotherelliptically shaped cylindrical channel pillar 308. In other words,source line SL2 and bit line BL2 are located within the sameelliptically shaped cylindrical channel pillar 308.

FIG. 5 also illustrates four word lines including WL1, WL2, WL3 and WL4.The four word lines correspond to electrical connections to various gatelayers (e.g., gate layers 304 of FIG. 3) or to the gate layersthemselves.

As illustrated in FIG. 5, a cell is selected for the program (write)operation. The selected cell of the 3D AND memory is located at theintersection of source line SL1, bit line BL1 and word line WL4. Inorder to perform a program (write) operation on the selected cell (i) aselected word line voltage V_(PGM) of approximately 5V to 8V is appliedto word line WL4, (ii) a de-selected word line voltage of approximately0V is applied to non-selected word lines WL1, WL2 and WL3, (iii) aselected bit line voltage of approximately 0V is applied to bit lineBL1, (iv) a selected source line voltage of 0V is applied to source lineSL1, (v) a de-selected bit line voltage V_(INHIBIT)=0.5V_(PGM) isapplied to non-selected bit line L2 and (vi) a de-selected source linevoltage V_(INHIBIT)=0.5V_(PGM) is applied to non-selected source lineSL2. With the 3D AND flash memory structure described herein, a targetprogram (write) speed of approximately 1 μs can be achieved.

FIG. 6 illustrates various voltages applied to a 3D AND flash memory toperform an erase operation, according to an aspect of the technologydisclosed.

The 3D AND flash memory is configured to perform various operations,such as read, program (write) and erase. Controller circuitry isconfigured to provide specific electrical signals to various parts ofthe 3D AND flash memory in order to perform these various operations.The controller circuitry is illustrated in FIG. 15 and is discussed inmore detail below.

FIG. 6 illustrates source line SL1, bit line BL1, source line SL2 andbit line BL2. Source line SL1 corresponds, for example, to an electricalconnection to first conductive pillar 310 of FIG. 3 or corresponds tothe first conductive pillar 310 itself. Bit line BL1 corresponds, forexample, to an electrical connection to second conductive pillar 312 ofFIG. 3 or corresponds to the second conductive pillar 312 itself.Further, source line SL1 and bit line BL1 correspond to electricalconnections to a first conductive pillar 310 and second conductivepillar 312 pair (or to the first conductive pillar 310 and secondconductive pillar 312 pair itself) located within a particularelliptically shaped cylindrical channel pillar 308. In other words,source line SL1 and bit line BL1 are located within the sameelliptically shaped cylindrical channel pillar 308.

Source line SL2 corresponds, for example, to an electrical connection toanother first conductive pillar 310 of FIG. 3 or corresponds to theother first conductive pillar 310 itself. Bit line BL2 corresponds, forexample, to an electrical connection to another second conductive pillar312 of FIG. 3 or corresponds to the other second conductive pillar 312itself. Further, source line SL2 and bit line BL2 correspond toelectrical connections to another first conductive pillar 310 and secondconductive pillar 312 pair (or to the other first conductive pillar 310and second conductive pillar 312 pair itself) located within a anotherelliptically shaped cylindrical channel pillar 308. In other words,source line SL2 and bit line BL2 are located within the sameelliptically shaped cylindrical channel pillar 308.

FIG. 4 also illustrates four word lines including WL1, WL2, WL3 and WL4.The four word lines correspond to electrical connections to various gatelayers (e.g., gate layers 304 of FIG. 3) or to the gate layersthemselves.

As illustrated in FIG. 6, a cell is selected for the erase operation.The selected cell of the 3D AND memory is located at the intersection ofsource line SL1, bit line BL1 and word line WL4. In order to perform anerase operation on the selected cell (i) a selected word line voltageV_(ERS) of approximately −5V to −8V is applied to word line WL4, (ii) ade-selected word line voltage of approximately 0V is applied tonon-selected word lines WL1, WL2 and WL3, (iii) a selected bit linevoltage of approximately 0V is applied to bit line BL1, (iv) a selectedsource line voltage of 0V is applied to source line SL1, (v) ade-selected bit line voltage V_(INHIBIT)=0.5V_(ERS) is applied tonon-selected bit line BL2 and (vi) a de-selected source line voltageV_(INHIBIT)=0.5V_(ERS) is applied to non-selected source line SL2. Withthe 3D AND flash memory structure described herein, a target erase speedof approximately 1 μs can be achieved.

In one aspect of the technology disclosed, an undesirably high negativebias at source line SL1 and bit line BL1 can be avoided. In this aspectof the technology disclosed, voltages are shifted (divided voltagescheme) to avoid the negative bias. For example, at V_(ERS)=−8V,voltages applied to the terminals are shifted +4V. For example, +4V canbe applied to selected source line SL1 and selected bit line BL1, 0V canbe applied to de-selected source line SL2 and de-selected bit line BL2,−4V can be applied to selected word line WL4 and +4V can be applied tode-selected word lines WL1, WL2 and WL3. This erase operation can be bitalterable.

FIG. 7 illustrates various steps performed to manufacture a gate stackstructure of a 3D AND flash memory according to a first process. Theentire first process spans FIGS. 7-11. The resulting structure formedfrom the first process results in a structure that has a differentferroelectric layer formation when compared to the ferroelectric layerformation resulting from the structure formed by a (different) secondprocess described in more detail below.

Process flow 700 of FIG. 7 includes four steps including (1) stackformation, (2) vertical channel hole formation, (3) channel depositionand (4) channel spacer formation. Each step includes a cross-sectionview A-A′, a top view B-B′ from one location and a top view C-C′ fromanother location.

The stack formation step includes forming a stack that includes adielectric layer (base) 702 having two electrical connections 704 and706 disposed therein. The dielectric layer (base) 702, for example, canbe a silicon oxide layer that is formed on a silicon substrate or it canbe any other dielectric known to a person of ordinary skill in the art.The electrical connection 704 (e.g., a conductive plug) can be a firstburied conductor (e.g., a buried source conductor) that is disposedhorizontally under the stack and is eventually electrically connected tothe source pillar (e.g., see first conductive pillar 210 of FIG. 2) andthe electrical connection 706 (e.g., a conductive plug) can be a secondburied conductor (e.g., a buried drain conductor) that is disposedhorizontally under the stack and is eventually electrically connected tothe drain pillar (e.g., see second conductive pillar 212 of FIG. 2). Theelectrical connection 704 can be referred to as a disposed first buriedconductor that is connected to a first conductive pillar 210 and theelectrical connection 706 can be referred to as a disposed second buriedconductor that is connected to a second conductive pillar 212. Theelectrical connections 704 and 706 are comprised of polysilicon, metalof other conductive materials. The electrical connections 704 and 706can be an etching stop layer.

The stack structure formed in the stack formation step further includesalternating layers of (i) an insulating layer such as, for example,silicon oxide and (ii) a sacrificial layer of, for example, siliconmononitride (SiN). The bottom silicon oxide layer can be referred to asa first layer, the adjacent SiN layer can be referred to as a secondlayer, the adjacent silicon oxide layer can be referred to as a thirdlayer, the adjacent SiN layer can be referred to as a fourth layer andthe adjacent silicon oxide layer can be referred to as a fifth layer. InFIG. 7, the stack structure has three insulating layers and twosacrificial layers, but the technology disclosed is not limited thereto.For example, more insulating layers and more sacrificial layers may beformed according to actual requirements. Further, as illustrated in thestack formation step, top view B-B′ provides a top view of theinsulating layer and top view C-C′ provides a top view of thesacrificial layer

The vertical channel hole formation step includes forming a vertical andelliptical channel hole 708 in the alternating layers. Top view B-B′ andtop view C-C′ illustrate the elliptical cross-section of the verticaland elliptical channel hole 708.

The channel deposition step includes applying a channel layer 710 alongthe vertical walls of the five alternating layers and on top of theuppermost insulating layer. Specifically, the channel layer 710 can beapplied by forming a channel material layer on a top face of anuppermost insulating layer and an inner surface and a bottom of thevertical and elliptical channel hole 708. The channel layer 710 can be,for example, an undoped polysilicon layer, or can be otherwise doped(e.g., lightly doped) for purposes of performing as a channel. Top viewB-B′ and top view C-C′ illustrate the elliptical cross-section of thechannel layer 710 and the vertical and elliptical channel hole 708.

The channel spacer step includes removing a portion of the channel layer710 that is on the top of the uppermost insulating layer and removing aportion of the channel layer 710 that is on the bottom of the verticaland elliptical channel hole 708. This can be done by, for example,performing an anisotropic etching process to remove the channel layer710 from the top of the uppermost insulation layer and the bottom of thevertical and elliptical channel hole 708. Top view B-B′ and top viewC-C′ illustrate the fact that the channel layer 710 has been removedfrom the bottom of the vertical and elliptical channel hole 708.

FIG. 8 illustrates various steps performed to manufacture a gate stackstructure of a 3D AND flash memory according to the first process.

Specifically, FIG. 8 illustrates process flow 800, which continues theprocess illustrated in FIG. 7 and discussed above. Process flow 800 ofFIG. 8 includes four steps including (5) insulator fill and center spaceformation, (6) SiN fill in, (7) hole etch and (8) oxide removal. Eachstep includes a cross-section view A-A′, a top view B-B′ from onelocation and a top view C-C′ from another location.

The insulator fill and center space formation step includes depositingan insulator, such as, for example, oxide into the vertical andelliptical channel hole 708, while also leaving a center space 802 inthe vertical and elliptical channel hole 708. The center space 802 canbe, for example an annular hole with a diameter that reduces as thecenter space 802 gets closer to the dielectric layer 702. Top view B-B′and Top view C-C′ illustrate the elliptical cross-sectional shape of theoxide within the vertical and elliptical channel hole 708 and alsoillustrate the circular or annular cross-sectional shape of the centerspace 802.

The SiN fill in step includes filling in the center space 802 with aninsulator, such as SiN. This SiN can be referred to as a center column.The oxide insulator surrounds the center column. Top view B-B′ and Topview C-C′ illustrate the cross-sectional view of the SiN filled into thecenter space 802.

The hole etch step includes etching a hole 804 through the oxide layerand etching a hole 806 through the oxide layer. Top view B-B′ and Topview C-C′ illustrate the orientation of the hole 804, the hole 806 andthe SiN with respect to one another.

The oxide removal step includes further removing portions of the oxide.Top view B-B′ and Top view C-C′ illustrate the additional portions ofthe oxide that are removed in this step. The step essentially expandsthe holes 804 and 806, such that the expanded holes reach the channellayer 710.

FIG. 9 illustrates various steps performed to manufacture a gate stackstructure of a 3D AND flash memory according to the first process.

Specifically, FIG. 9 illustrates process flow 900, which continues theprocess illustrated in FIG. 8 and discussed above. Process flow 900 ofFIG. 9 includes three steps including (9) Plug formation, (10) SiN stackremoval and (11) formation of ferroelectric and TiN layers. Each stepincludes a cross-section view A-A′, a top view B-B′ from one locationand a top view C-C′ from another location.

The plug formation step includes disposing, for example, conductors suchas a doped polysilicon layers 902 and 904 in the expanded holes formedin the oxide removal step of FIG. 8. The doped polysilicon layers 902and 904 represent the first conductive pillar 210 and the secondconductive pillar 212 of the 3D AND flash memory, as illustrated in FIG.2. As illustrated in top view B-B′ and top view C-C′, the layers 902 and904 are within the elliptical channel layer 710. Further, layers 902 and904 are separated (insulated) from each other by the oxide and the SiN.Hereinafter, the layer 902 will be referred to as the first conductivepillar and layer 904 will be referred to as the second conductivepillar.

The SiN stack removal step includes removing the sacrificial layers fromthe stack to form openings 906, 908, 910 and 912. Top view B-B′ and topview C-C′ illustrate the differences in cross-sections that include thesilicon oxide (see view B-B′) and that include the openings 910 and 912(see view C-C′).

The formation of ferroelectric and TiN layers includes addingferroelectric layers 914 inside the openings 906, 908, 910 and 912 andthen adding TiN layers 916 inside the openings 906, 908, 910 and 912.The ferroelectric layers 914 may be comprised of a ferroelectric HfO₂material or any other ferroelectric type material that is known to aperson of ordinary skill in the art, and the TiN layers 916 may compriseother metal Nitride materials or other barrier materials such as TaN.Top view B-B′ illustrates that the ferroelectric layers 914 and the TiNlayers 916 are not present in the cross-section of the silicon oxidelayer and top view C-C′ illustrates that the ferroelectric layers 914and the TiN layers 916 are present in the cross section taken from wherethe openings 910 and 912 were formed. As illustrated in top view C-C′,one of the ferroelectric layers 914 is elliptical and contacts thechannel layer and one of the TiN layers 916 is elliptical and contactsthe ferroelectric layer 914.

FIG. 10 illustrates a step performed to manufacture a gate stackstructure of a 3D AND flash memory according to the first process.

Specifically, FIG. 10 illustrates process flow 1000, which continues theprocess illustrated in FIG. 9 and discussed above. Process flow 1000 ofFIG. 10 includes one step including (12) gate formation.

The gate formation step includes adding gate layers 1002 in theremaining spaces of the openings 906, 908, 910 and 912. As illustrated,the ferroelectric layer 914 is covers (in on) an upper surface and alower surface of each gate layer 1002. The gate layers 1002 maycomprise, for example, polysilicon, amorphous silicon, tungsten (W),cobalt (Co), aluminum (Al), tungsten silicide (WSix), or cobalt silicide(CoSix). In addition, in other embodiments, a barrier layer may besequentially formed in the openings 906, 908, 910 and 912 before thegate layers 1002 are formed. The barrier layer can be made of, forexample, titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalumnitride (TaN), or a combination thereof.

Top view B-B′ and top view C-C′ illustrate the different layerssurrounding the channel layer 710 from the cross-section of a siliconoxide layer and the cross-section of a gate layer 1002.

FIG. 11 illustrates various steps performed to manufacture a gate stackstructure of a 3D AND flash memory according to a second process.

The resulting structure formed from the second process results in astructure that has a different ferroelectric layer formation whencompared to the ferroelectric layer formation resulting from thestructure formed by the first process.

Process flow 1100 of FIG. 11 includes 4 steps including (1) stackformation, (2) vertical channel hole formation, (3) ferroelectric layerformation and (4) channel deposition. Each step includes a cross-sectionview A-A′, a top view B-B′ from one location and a top view C-C′ fromanother location.

The stack formation step includes forming a stack that includes adielectric layer (base) 1102 having two electrical connections 1104 and1106 disposed therein. The dielectric layer (base) 1102, for example, isa silicon oxide layer that is formed on a silicon substrate. Theelectrical connection 1104 can be a source conductor that is disposedhorizontally under the stack and is eventually electrically connected tothe source pillar (e.g., see first conductive pillar 210 of FIG. 2) andthe electrical connection 1106 can be a drain conductor that is disposedhorizontally under the stack and is eventually electrically connected tothe drain pillar (e.g., see second conductive pillar 212 of FIG. 2). Theelectrical connection 1104 can be referred to as a disposed first buriedconductor that is connected to a first conductive pillar 210 and theelectrical connection 1106 can be referred to as a disposed secondburied conductor that is connected to a second conductive pillar 212.The electrical connections 1104 and 1106 are comprised of polysilicon,metal of other conductive materials.

The stack structure formed in the stack formation step further includesalternating layers of (i) an insulating layer such as, for example,silicon oxide and (ii) a sacrificial layer of, for example, siliconmononitride (SiN). In FIG. 11, the stack structure has three insulatinglayers and two sacrificial layers, but the technology disclosed is notlimited thereto. For example, more insulating layers and moresacrificial layers may be formed according to actual requirements.Further, as illustrated in the stack formation step, top view B-B′provides a top view of the insulating layer and top view C-C′ provides atop view of the sacrificial layer

The vertical channel hole formation step includes forming a vertical andelliptical channel hole 1108 in the alternating layers. Top view B-B′and top view C-C′ illustrate the elliptical cross-section of thevertical and elliptical channel hole 1108.

The ferroelectric layer formation step includes applying a ferroelectriclayer 1108 along the vertical walls of the five alternating layers andon top of the uppermost insulating layer. Specifically, theferroelectric layer 1110 can be applied by forming a ferroelectricmaterial layer on a top face of an uppermost insulating layer and aninner surface and a bottom of the vertical and elliptical channel hole1108. The ferroelectric layer 1110 can be, for example a ferroelectricHfO₂ material or any other ferroelectric type material that is known toa person of ordinary skill in the art. Top view B-B′ and top view C-C′illustrate the elliptical cross-section of the ferroelectric layer 1110and the vertical and elliptical channel hole 1108.

The channel deposition step includes applying a channel layer 1112 alongthe ferroelectric layer 1110. Specifically, the channel layer 1112 canbe applied by forming a channel material over the ferroelectric layer1110, such that it is located on a top face of an uppermost insulatinglayer and an inner surface and a bottom of the vertical and ellipticalchannel hole 1108. The channel layer 1112 can be, for example, anundoped polysilicon layer, or can be otherwise doped (e.g., lightlydoped) for purposes of performing as a channel. Top view B-B′ and topview C-C′ illustrate the elliptical cross-section of the ferroelectriclayer 1110, the channel layer 1112 and the vertical and ellipticalchannel hole 1108. As illustrated, the ferroelectric layer 1110covers/surrounds an outer surface of the channel layer 1112.

FIG. 12 illustrates various steps performed to manufacture a gate stackstructure of a 3D AND flash memory according to the second process.

Specifically, FIG. 12 illustrates process flow 1200, which continues theprocess illustrated in FIG. 12 and discussed above. Process flow 1200 ofFIG. 12 includes four steps including (5) spacer formation, (6)insulator fill and center space formation, (7) SiN fill in and (8) holeetch. Each step includes a cross-section view A-A′, a top view B-B′ fromone location and a top view C-C′ from another location.

The channel spacer step includes removing a portion of the ferroelectriclayer 1110 and the channel layer 1112 that is on the top of theuppermost insulating layer and removing a portion of ferroelectric layer1110 and the channel layer 1112 that is on the bottom of the verticaland elliptical channel hole 1108. This can be done by, for example,performing an anisotropic etching process to remove the ferroelectriclayer 1110 and the channel layer 1112 from the top of the uppermostinsulation layer and the bottom of the vertical and elliptical channelhole 1108. Top view B-B′ and top view C-C′ illustrate the fact that theferroelectric layer 1110 and the channel layer 1112 have been removedfrom the bottom of the vertical and elliptical channel hole 1108. Asillustrated, the ferroelectric layer 1110 covers an outer surface of thechannel layer 1112 (e.g., the elliptically shaped cylindrical channelpillar 206 of FIG. 2).

The insulator fill and center space formation step includes depositingan insulator, such as, for example, oxide into the vertical andelliptical channel hole 1108, while also leaving a center space 1202 inthe vertical and elliptical channel hole 1108. The center space 1202 canbe, for example an annular hole with a diameter that reduces as thecenter space 1202 gets closer to the dielectric layer (base) 1102. Topview B-B′ and Top view C-C′ illustrate the elliptical cross-sectionalshape of the oxide within the vertical and elliptical channel hole 1108and also illustrate the circular or annular cross-sectional shape of thecenter space 1202.

The SiN fill in step includes filling in the center space 1202 with aninsulator, such as SiN. Top view B-B′ and Top view C-C′ illustrate thecross-sectional view of the SiN filled into the center space 1202.

The hole etch step includes etching a hole 1204 through the oxide layerand etching a hole 1206 through the oxide layer. Top view B-B′ and Topview C-C′ illustrate the orientation of the hole 1204, the hole 1206 andthe SiN with respect to one another.

FIG. 13 illustrates various steps performed to manufacture a gate stackstructure of a 3D AND flash memory according to the second process.

Specifically, FIG. 13 illustrates process flow 1300, which continues theprocess illustrated in FIG. 12 and discussed above. Process flow 1300 ofFIG. 13 includes three steps including (9) oxide removal, (10) Plugformation and (11) SiN stack removal. Each step includes a cross-sectionview A-A′, a top view B-B′ from one location and a top view C-C′ fromanother location.

The oxide removal step includes further removing portions of the oxide.Top view B-B′ and Top view C-C′ illustrate the additional portions ofthe oxide that are removed in this step. The step essentially expandsthe holes 1204 and 1206 to form expanded holes 1302 and 1304, such thatthe expanded holes reach the channel layer 1112.

The plug formation step includes disposing, for example, conductors suchas a doped polysilicon layers 1306 and 1308 the expanded holes 1302 and1304 formed in the oxide removal step. The doped polysilicon layers 1306and 1308 represent the first conductive pillar 210 and the secondconductive pillar 212 of the 3D AND flash memory, as illustrated in FIG.2. As illustrated in top view B-B′ and top view C-C′, the layers 1306and 1308 are within the elliptical channel layer 1112. Further, layers1306 and 1308 are separated (insulated) from each other by the oxide andthe SiN. Hereinafter, the layer 1306 will be referred to as the firstconductive pillar and layer 1308 will be referred to as the secondconductive pillar.

The SiN stack removal step includes removing the sacrificial layers fromthe stack to form openings 1310, 1312, 1314 and 1316. Top view B-B′ andtop view C-C′ illustrate the differences in cross-sections that includethe silicon oxide (see view B-B′) and that include the openings 1314 and1316 (see view C-C′).

FIG. 14 illustrates a step performed to manufacture a gate stackstructure of a 3D AND flash memory according to the second process.

Specifically, FIG. 14 illustrates process flow 1400, which continues theprocess illustrated in FIG. 13 and discussed above. Process flow 1400 ofFIG. 14 includes one step including (12) TiN and gate formation.

The formation TiN layers includes adding TiN layers 1402 inside theopenings 1310, 1312, 1314 and 1316. The TiN layers 916 may compriseother metal Nitride materials or other barrier materials, such as TaN.Top view B-B′ illustrates that the ferroelectric layers 1110 and the TiNlayers 1402 are not present in the cross-section of the silicon oxidelayer and top view C-C′ illustrates that the ferroelectric layers 1110and the TiN layers 1404 are present in the cross section taken fromwhere the openings 1314 and 1316 were formed. As illustrated in top viewC-C′, one of the ferroelectric layers 1110 is elliptical and contactsthe channel layer 1112 and one of the TiN layers 1402 is elliptical andcontacts the ferroelectric layer 1110.

The gate formation step includes adding gate layers 1404 in theremaining spaces of the openings 1310, 1312, 1314 and 1316. The gatelayers 1404 may comprise, for example, polysilicon, amorphous silicon,tungsten (W), cobalt (Co), aluminum (Al), tungsten silicide (WSix), orcobalt silicide (CoSix). In addition, in other embodiments, a barrierlayer may be sequentially formed in the openings 1310, 1312, 1314 and1316 before the gate layers 1404 are formed. The barrier layer can bemade of, for example, titanium (Ti), titanium nitride (TiN), tantalum(Ta), tantalum nitride (TaN), or a combination thereof.

Top view B-B′ and top view C-C′ illustrate the different layerssurrounding the channel layer 1112 from the cross-section of a siliconoxide layer and the cross-section of a gate layer 1404.

FIG. 15 illustrates a simplified block diagram of a gate stack structureof a 3D AND flash memory, host and a controller configured to performoperations on the 3D AND flash memory.

FIG. 15 is a simplified diagram of a memory system 1500 that includes a3D AND flash memory device 1508 implemented on an integrated circuit anda host 1502 configured for memory operations, including page program,program, read, erase, or other operations. In various embodiments, thememory device 1508 may have single-level cells (SLC), or multiple-levelcells storing more than one bit per cell (e.g., MLC, TLC or XLC). Thememory device 1508 can be implemented on a single integrated circuitchip, on a multichip module, or on a plurality of chips configured assuits a particular need.

The memory device 1508 includes a memory array 1578, which can be a 3DAND flash memory implemented using three-dimensional array technology,such as the structures described above with reference to FIGS. 1-14. Insome embodiments, the memory array 1578 comprises an array of verticalAND pillars in a dense 3D configuration. In other embodiments the memoryarray 1578 can comprise a two-dimensional array of AND pillars.

A word line decoder 1576A is coupled via word line driver circuits 1576Bto a plurality of word lines 1577 in the memory array 1578. Page buffercircuits 1538 are coupled by bit line driver circuits 1548 to bit lines1566 in the memory array 1578. In some embodiments, column decodercircuits can be included for routing data from the bit line drivers toselected bit lines. The page buffer circuits 1538 can store pages ofdata that define a data pattern for a page program operation, and caninclude sensing circuits used in read and verify operations

Bit lines for memory arrays can comprise global bit lines (GBL) andlocal bit lines. Bit lines generally comprise conductors in higherpatterned layers that traverse a plurality of blocks of memory cells inan array and connect to local bit lines in the blocks via block selecttransistors or bank select transistors. The local bit lines areconnected to the memory cells for current flow to and from the bitlines, which in turn are connected to the bit line driver circuits 1548and page buffer circuits 1538. Likewise, the word lines can includeglobal word lines and local word lines with corresponding supportingcircuits in the word line drivers 1576B.

In a sensing operation, sensed data from the page buffer circuits 1538are supplied via second data lines in bus system 1526 to cache circuits1528, which are in turn coupled to input/output circuits 1518 via datapath lines 1516. Also, input data is applied in this example to thecache circuits 1528 on lines 1516, and to the page buffer circuits 1538on bus system 1526, for use in support of program operations.

Input/output circuits 1518 are connected by line 1514 (including I/Opads) and provide communication paths for the data, addresses andcommands with destinations external to the memory device 1508, includingthe host 1502 in this example. The input/output circuits 1518 provide acommunication path by line 1516 to cache circuits 1528 which supportmemory operations. The cache circuits 1528 are in data flowcommunication (using for example a bus system 1526) with page buffercircuits 1538.

Control circuits 1534 are connected to the input/output circuits 1518,and include command decoder logic, address counters, state machines,timing circuits and other logic circuits that control various memoryoperations, including program, read, and erase operations for the memoryarray 1578. For example, with reference to FIGS. 1-14 and thedescriptions thereof, the control circuits 1534 are configured to (i)provide various voltages to a selected word line connected to a selectedgate layer of a gate stack structure of the 3D flash memory, (ii)provide various voltages to a selected bit line connected to the secondconductive pillar within the elliptically shaped cylindrical channelpillar of the 3D flash memory, and (iii) provide various voltages to aselected source line connected to the first conductive pillar within theelliptically shaped cylindrical channel pillar of the 3D flash memory.

Control circuit signals are distributed to circuits in memory device, asshown by arrows 1545, 1546, as required to support the operations of thecircuits. The control circuits 1534 can include address registers andthe like for delivery of addresses as necessary to the components of thememory device 1508, including delivery to the cache circuits 1528, andon line 1544 to the page buffer circuits 1538 and word line decoder1576A in this illustration.

In the example shown in FIG. 15, control circuits 1534 include controllogic circuits that include modules implementing a bias arrangementstate machine, or machines, which controls, or control, the applicationof bias voltages generated or provided through the voltage supply orsupplies in block 1564, such as read, erase, verify and program voltagesincluding precharge voltages, pass voltages and other bias voltages asdescribed herein to word line driver circuits 1576B and bit line drivercircuits 1548, for a set of selectable program and read operations. Biasvoltages are applied as represented by arrow 1565, to components of thememory device 1508, as necessary for support of the operations. Asdescribed in more detail below, the control circuits 1534 provideappropriate signals (e.g., voltages) to perform the various read, writeand erase operations described above with respect to FIGS. 4-6.

The control circuits 1534 can include modules implemented usingspecial-purpose logic circuitry including state machines, as known inthe art. In alternative embodiments, the control circuits 1534 caninclude modules implemented using a general-purpose processor, which canbe implemented on the same integrated circuit, which execute a computerprogram to control the operations of the memory device 1508. In yetother embodiments, a combination of special-purpose logic circuitry anda general-purpose processor can be utilized for implementation ofmodules in control circuits 1534.

The 3D AND flash memory array 1578 can comprise floating gate memorycells or dielectric charge trapping memory cells configured to storemultiple bits per cell, by the establishment of multiple program levelsthat correspond to amounts of charge stored, which in turn establishmemory cell threshold voltages Vt. The technology can be used withsingle-bit-per-cell flash memory, and with other multiple-bit-per-celland single-bit-per-cell memory technologies. In other examples, thememory cells may comprise programmable resistance memory cells, phasechange memory cells, and other types of non-volatile and volatile memorycell technologies.

In the illustrated example, the host 1502 is coupled to lines 1514 onthe memory device 1508, as well as other control terminals not shown,such as chip select terminals and so on, and can provide commands orinstructions to the memory device 1508. In some examples, the host 1502can be coupled to the memory device using a serial bus technology, usingshared address and data lines. The host 1502 can comprise ageneral-purpose processor, a special purpose processor, a processorconfigured as a memory controller, or other processor that uses thememory device 1508. All or part of the host 1502 can be implemented onthe same integrated circuit as the memory.

The host 1502 can include a file system or file systems that store,retrieve, and update data stored in the memory based on requests from anapplication program. In general, the host 1502 can include programs thatperform memory management functions and other functions that can producestatus information for data stored in the memory, including informationmarking data invalid as a result of such functions. Such functions caninclude for example wear leveling, bad block recovery, power lossrecovery, garbage collection, error correction, and so on. Also, thehost 1502 can include application programs, file systems, flashtranslation layer programs and other components that can produce statusinformation for data stored in the memory, including information markingdata invalid as a result of such functions.

In high density memory, a page can comprise hundreds or thousands ofbits, and a page buffer can be connected in parallel to thecorresponding hundreds or thousands of bit lines. During programoperations, for example, one set of bit lines and a word line areselected to be biased for programming a particular data pattern that isdefined by contents of the page buffer circuits 1538, and a differentset of bit lines is selected to be biased to inhibit programmingaccording to the particular data pattern.

Other implementations of the method described in this section caninclude a non-transitory computer readable storage medium storinginstructions executable by a processor to perform any of the methodsdescribed above. Yet another implementation of the method described inthis section can include a system including memory and one or moreprocessors operable to execute instructions, stored in the memory, toperform any of the methods described above.

Any data structures and code described or referenced above are storedaccording to many implementations on a computer-readable storage medium,which may be any device or medium that can store code and/or data foruse by a computer system. This includes, but is not limited to, volatilememory, non-volatile memory, application-specific integrated circuits(ASICs), field-programmable gate arrays (FPGAs), magnetic and opticalstorage devices such as disk drives, magnetic tape, CDs (compact discs),DVDs (digital versatile discs or digital video discs), or other mediacapable of storing computer-readable media now known or later developed.

A number of flowcharts illustrating logic executed by a memorycontroller or by memory device are described herein. The logic can beimplemented using processors programmed using computer programs storedin memory accessible to the computer systems and executable by theprocessors, by dedicated logic hardware, including field programmableintegrated circuits, and by combinations of dedicated logic hardware andcomputer programs. With all flowcharts herein, it will be appreciatedthat many of the steps can be combined, performed in parallel orperformed in a different sequence without affecting the functionsachieved. In some cases, as the reader will appreciate, a re-arrangementof steps will achieve the same results only if certain other changes aremade as well. In other cases, as the reader will appreciate, are-arrangement of steps will achieve the same results only if certainconditions are satisfied. Furthermore, it will be appreciated that theflow charts herein show only steps that are pertinent to anunderstanding of the invention, and it will be understood that numerousadditional steps for accomplishing other functions can be performedbefore, after and between those shown.

While the present invention is disclosed by reference to the preferredembodiments and examples detailed above, it is to be understood thatthese examples are intended in an illustrative rather than in a limitingsense. It is contemplated that modifications and combinations willreadily occur to those skilled in the art, which modifications andcombinations will be within the spirit of the invention and the scope ofthe following claims.

What is claimed is:
 1. A 3D flash memory, comprising: a gate stackstructure comprising a plurality of gate layers electrically insulatedfrom each other; a cylindrical channel pillar vertically extendingthrough each gate layer of the gate stack structure; a first conductivepillar vertically extending through the gate stack structure, the firstconductive pillar being located within the cylindrical channel pillarand being electrically connected to the cylindrical channel pillar; asecond conductive pillar vertically extending through the gate stackstructure, the second conductive pillar being located within thecylindrical channel pillar and being electrically connected to thecylindrical channel pillar, the first conductive pillar and the secondconductive pillar being separated from each other; and a ferroelectriclayer disposed between gate layers of the gate stack structure and thecylindrical channel pillar.
 2. The 3D flash memory according to claim 1,wherein an insulating pillar is disposed within the cylindrical channelpillar and between the first conductive pillar and the second conductivepillar.
 3. The 3D flash memory according to claim 1, wherein a firstburied conductor is disposed horizontally under the gate stack structureand is electrically connected to the first conductive pillar, andwherein a second buried conductor is disposed horizontally under thegate stack structure and is electrically connected to the secondconductive pillar.
 4. The 3D flash memory according to claim 1, whereinthe ferroelectric layer vertically extends through the gate stackstructure.
 5. The 3D flash memory according to claim 1, wherein theferroelectric layer is on an upper surface and a lower surface of a gatelayer of the plurality of gate layers.
 6. The 3D flash memory accordingto claim 1, wherein the ferroelectric layer surrounds an outer surfaceof the cylindrical channel pillar.
 7. The 3D flash memory according toclaim 1, wherein the cylindrical channel pillar is continuous in avertical direction.
 8. The 3D flash memory of claim 1, wherein theferroelectric layer is comprised of a ferroelectric HfO₂ material. 9.The 3D flash memory of claim 1, further comprising: an insulatordisposed between the first conductive pillar and the second conductivepillar and extending along a length of the first conductive pillar andthe second conductive pillar, the insulator separating the firstconductive pillar and the second conductive pillar from one another. 10.The 3D flash memory of claim 1, further comprising: a first buriedconductor disposed in a dielectric base onto which the gate stackstructure is disposed and connected to the first conductive pillar; asecond buried conductor disposed in the dielectric base and connected tothe second conductive pillar; and a control circuit configured toperform a program operation on the 3D flash memory by: providing avoltage V_(PGM) of approximately +5 volts to +8 volts on a selected wordline connected to a selected gate layer of the plurality of gate layers;providing a voltage of approximately 0 volts on a selected source lineconnected to the first buried conductor connected to the firstconductive pillar within the cylindrical channel pillar; and providing avoltage of approximately 0 volts on a selected bit line connected to thesecond buried conductor connected to the second conductive pillar withinthe cylindrical channel pillar.
 11. The 3D flash memory of claim 1,further comprising: a control circuit configured to perform an eraseoperation on the 3D flash memory by: providing a voltage V_(ERS) ofapproximately −5 volts to −8 volts on a selected word line connected toa selected gate layer of the plurality of gate layers; providing avoltage of approximately 0 volts on a selected source line connected tothe first conductive pillar within the cylindrical channel pillar; andproviding a voltage of approximately 0 volts on a selected bit lineconnected to the second conductive pillar within the cylindrical channelpillar.
 12. The 3D flash memory of claim 11, further comprising a secondcylindrical channel pillar having a same structure and arrangement asthe cylindrical channel pillar, wherein the control circuit is furtherconfigured to perform the erase operation on the 3D flash memory by:providing a voltage of approximately 0 volts to deselected word linesconnected to gate layers of the plurality of gate layers, except for theselected gate layer; providing a voltage of approximately(0.5)×(V_(ERS)) volts to a deselected source line connected to a thirdconductive pillar within the second cylindrical channel pillar; andproviding a voltage of approximately (0.5)×(V_(ERS)) volts to adeselected bit line connected to a fourth conductive pillar within thesecond cylindrical channel pillar.
 13. The 3D flash memory of claim 1,further comprising: a second cylindrical channel pillar having a samestructure and arrangement as the cylindrical channel pillar; a thirdconductive pillar having a same structure and arrangement as the firstconductive pillar; a fourth conductive pillar having a same structureand arrangement as the second conductive pillar; and a control circuitconfigured to perform a read operation on the 3D flash memory by:providing a voltage of approximately +2 volts to +4 volts on a selectedword line connected to a selected gate layer of the plurality of gatelayers; providing a voltage of approximately 0 volts on selected anddeselected source lines connected to the first conductive pillar withinthe cylindrical channel pillar and connected to the third conductivepillar within the second cylindrical channel pillar; and providing avoltage of approximately +0.5 volts to +1.5 volts on a selected bit lineconnected to the first conductive pillar within the cylindrical channelpillar.
 14. The 3D flash memory of claim 13, wherein the control circuitis further configured to perform the read operation on the 3D flashmemory by: providing a voltage of approximately 0 volts to −2 volts todeselected word lines connected to gate layers of the plurality of gatelayers, except for the selected gate layer; and providing a voltage ofapproximately 0 volts to a deselected bit line connected to the fourthconductive pillar within the second cylindrical channel pillar.
 15. The3D flash memory of claim 1, wherein the cylindrical channel pillar iselliptically shaped.
 16. A control circuit configured to program, eraseand read a 3D flash memory, wherein the 3D flash memory comprises: agate stack structure comprising a plurality of gate layers electricallyinsulated from each other; a cylindrical channel pillar verticallyextending through each gate layer of the gate stack structure; a firstconductive pillar vertically extending through the gate stack structure,the first conductive pillar being located within the cylindrical channelpillar and being electrically connected to the cylindrical channelpillar; a second conductive pillar vertically extending through the gatestack structure, the second conductive pillar being located within thecylindrical channel pillar and being electrically connected to thecylindrical channel pillar, the first conductive pillar and the secondconductive pillar being separated from each other; and a ferroelectriclayer disposed between gate layers of the gate stack structure and thecylindrical channel pillar, and wherein the control circuit isconfigured to variously perform program, erase and read operations by:providing various voltages to a selected word line connected to aselected gate layer of the gate stack structure of the 3D flash memory;providing various voltages to a selected bit line connected to thesecond conductive pillar within the cylindrical channel pillar of the 3Dflash memory; and providing various voltages to a selected source lineconnected to the first conductive pillar within the cylindrical channelpillar of the 3D flash memory.
 17. A method of forming a gate stackincluding a dielectric layer and a ferroelectric layer, the methodcomprising: forming a gate stack structure comprising a plurality ofgate layers electrically insulated from each other; forming acylindrical channel pillar vertically extending through each gate layerof the gate stack structure; forming a first conductive pillarvertically extending through the gate stack structure, the firstconductive pillar being located within the cylindrical channel pillarand being electrically connected to the cylindrical channel pillar;forming a second conductive pillar vertically extending through the gatestack structure, the second conductive pillar being located within thecylindrical channel pillar and being electrically connected to thecylindrical channel pillar; forming an insulating pillar disposed withinthe cylindrical channel pillar and between the first conductive pillarand the second conductive pillar; and forming a ferroelectric layerdisposed between gate layers of the gate stack structure and thecylindrical channel pillar.
 18. The method of claim 17, wherein theferroelectric layer vertically extends through the gate stack structure.19. The method of claim 17, wherein a cross-section of the ferroelectriclayer is an elliptical cylinder, and wherein the ferroelectric layersurrounds an outer surface of the cylindrical channel pillar.
 20. Themethod of claim 17, further comprising: disposing a first buriedconductor in a dielectric base onto which the gate stack structure isdisposed, the first buried conductor being connected to the firstconductive pillar; and disposing a second buried conductor in thedielectric base, the second buried conductor being connected to thesecond conductive pillar.